v ds (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 23m w (v gs = 10v) r ds(on) < 35m w (v gs = 4.5v) the AO4466 uses advanced trench technology to g d s symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 34 40 62 75 r q jl 18 24 i d power dissipation t a =25c w a 64 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a steady-state t 10s r q ja c/w c/w maximum junction-to-ambient a continuous drain current af maximum units parameter gate-source voltage drain-source voltage 10 7 30 t a =25c t a =70c 20 absolute maximum ratings t a =25c unless otherwise noted v v c 3.1 7 mj 2 -55 to 150 12 a repetitive avalanche energy 0.1mh b, g junction and storage temperature range p d t a =70c pulsed drain current b avalanche current b, g v ds (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 23m w (v gs = 10v) r ds(on) < 35m w (v gs = 4.5v) AO4466 30v n-channel mosfet the AO4466 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 16.7 23 t j =125c 24.3 30 23.7 35 m w g fs 17 s v sd 0.75 1 v i s 2.4 a c iss 298 373 448 pf c oss 46 67 88 pf c rss 24 41 58 pf r g 0.6 1.8 2.8 w q g (10v) 5.7 7.1 8.6 nc q g (4.5v) 2.7 3.5 4.2 nc q gs 1.2 nc q gd 1.6 nc t d(on) 4.3 ns on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v gate threshold voltage v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current drain-source breakdown voltage reverse transfer capacitance maximum body-diode continuous current input capacitance output capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =30 v gs =0v zero gate voltage drain current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =10a v gs =10v, i d =10a dynamic parameters v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz gate source charge v gs =10v, v ds =15v, i d =10a total gate charge gate drain charge total gate charge turn-on delaytime t d(on) 4.3 ns t r 2.8 ns t d(off) 15.8 ns t f 3 ns t rr 8.4 10.5 12.6 ns q rr 3.6 4.5 5.4 nc t rr 4.7 6.0 7.2 ns q rr 5.3 6.6 8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =10a, di/dt=100a/ m s body diode reverse recovery charge i f =10a, di/dt=100a/ m s body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=500a/ m s i f =10a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 b oard with 2oz. copper, in a still air environment w ith t a =25 c. the value in any given application depends on t he user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. g: l=100uh, v dd =0v, r g =0 , rated v ds =30v and v gs =10v rev 9: may. 2012 www.freescale.net.cn 2/6 AO4466 30v n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w w w w ) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v 25 c 125 c v ds =5v v gs =4.5v v gs =10v this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v v gs =4.5v 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =10a 25 c 125 c www.freescale.net.cn 3/6 AO4466 30v n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v (volts) 100 m s 10ms 1ms 100ms 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =15v i d =10a 10 m s 1.0 10.0 100.0 1 10 100 1000 i a , peak avalanche current (a) in descending order t a =25 c, 100 c, 125 c, 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 100ms 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =15v i d =10a 0 10 20 30 40 50 0.0001 0.01 1 100 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note e) t j(max) =150 c t a =25 c 10 m s 1.0 10.0 100.0 1 10 100 1000 i a , peak avalanche current (a) time in avalache, t a (ms) figure 9: single pulse avalanche capability in descending order t a =25 c, 100 c, 125 c, www.freescale.net.cn 4/6 AO4466 30v n-channel mosfet
typical electrical and thermal characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impe dance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse www.freescale.net.cn 5/6 AO4466 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 AO4466 30v n-channel mosfet
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